Handbook of Silicon Carbide Materials and Devices

Cover
Half Title
Series Information
Title Page
Copyright Page
Table of Contents
Preface
Editor Biography
List of Contributors
Part I General
1 Silicon Carbide: Presolar SiC Stardust Grains and the Human History of SiC From 1824 to 1974
1 Introduction
2 Presolar SiC Stardust Particles
3 SiC History From 1824 to 1974
4 Final Thoughts
References
2 Recent Progresses in Vapor-Liquid-Solid Growth of High-Quality SiC Single Crystal Films and Related Techniques
1 Introduction
2 Vapor-Liquid-Solid (VLS) Growth Mechanism
2.1 Brief History of the VLS Growth Mechanism Toward Single Crystal Films
2.2 Chemical Engineering Aspects in the VLS Growth Mechanism
3 Experiment
3.1 Pulsed Laser Deposition (PLD)-Based VLS
3.2 Confocal Laser Scanning Microscope (CLSM) at Solution Growth Interfaces
4 VLS Growth of SiC Films
4.1 Origin of the Flattening Effect of Al Addition On the VLS Growth of SiC [30]
4.2 Pt Additive Effect On the Step-Bunching in the Growth of SiC On Vicinal Substrates [44]
5 VLS-Like Growth of SiC Films
5.1 Basic Concept of VLS-Like Growth
5.2 Homoepitaxial Growth of SiC Films [52]
5.3 Heteroepitaxial Growth of SiC Films [53]
5.4 Visible Light Photocurrent Response
6 Conclusions and Future Prospects
Acknowledgements
References
3 Spectroscopic Investigations for the Dynamical Properties of Defects in Bulk and Epitaxially Grown 3C-SiC/Si (100)
1 Background
2 Silicon Carbide: A Wide Bandgap Material for Power and Microelectronics
2.1 Crystalline Structure
2.1.1 Polytypism
2.1.2 Growth of SiC
2.1.3 Emerging Interest in Cubic SiC
2.1.4 3C-SiC/Si Processing Issues
2.1.5 Basic Properties of SiC
3 Phonons
3.1 Group Theoretical Classification of Phonons
3.2 Spectroscopic Methods
3.2.1 Infrared Spectroscopy
3.2.2 Infrared Spectroscopic Ellipsometry
3.2.3 Raman Scattering Spectroscopy
3.2.4 X-Ray Absorption Fine Structure Spectroscopy
4 Optical Response Theory
4.1 Drude-Lorentz Model of IR Spectroscopy On Bulk 3C-SiC
4.1.1 The Refractive Index
4.1.2 Reflectivity
4.2 Infrared Reflectivity of 3C-SiC/Si Epilayers: Ideal Configuration
4.3 Infrared Reflectivity of 3C-SiC/Si Materials: Modified Model
4.4 Infrared Reflectivity of 3C-SiC/Si Epifilms at Oblique Incidence
4.5 Infrared Reflectivity of Superlattice Structures
5 Spectroscopic Analysis of Infrared Spectra
5.1 Ideal 3C-SiC/Si Films
5.1.1 Effects of Film Thickness
5.1.2 Reflectivity and Transmission of 3C-SiC/Si Epifilms
5.1.3 Impact of Oblique Incidence On Transmission/Reflection: Berreman Effect
5.1.4 Transmission at Oblique Incidence: Impact of Film Thickness of 3C-SiC/Si
5.1.5 LO-Plasmon Coupling in N-Doped 3C-SiC
5.1.6 Effects of Plasma Damping
5.1.7 Transmission Spectra at Oblique Incidence in Doped 3C-SiC/Si Epilayers
5.2 Typical Reflectance Spectra of 3C-SiC/Si (100) Epilayers
5.2.1 Effect of Transition Layer and Surface Roughness
5.2.2 Two-Component Bruggeman’s Model
6 Structural Characteristics of V-CVD Grown 3C-SiC
6.1 Synchrotron Radiation X-Ray Absorption Spectroscopy (SR-XAFS)
7 Lattice Dynamics of Defects in 3C-SiC/Si
7.1 Phonon Characteristics of 3C-SiC
7.2 Green’s Function Theory
7.2.1 The Perfect Green’s Function Matrix Go(.)
7.2.2 The Perturbation Matrix P(.)
7.2.3 Group-Theoretic Analysis of Impurity Vibrational Modes
7.2.4 Impurity Vibrational Modes of NN Anti-Site Pairs
8 Summary
Acknowledgements
References
4 SiC Materials, Devices, and Applications: A Review of Developments and Challenges in the 21st Century
1 Introduction
2 A Review of Developments and Challenges On SiC Substrate
3 A Review of Developments and Challenges On SiC Epitaxy
4 A Review of Developments and Challenges On SiC Devices
5 A Review of Developments and Challenges On the SiC Package and Module
6 A Review of Developments and Challenges On SiC Applications
7 A Review of Developments and Challenges On SiC Technical Standardization
8 Conclusion
References
Part II SiC Materials Growth and Processing
5 CVD of SiC Epilayers – Basic Principles and Techniques
1 Introduction
2 SiC CVD System
2.1 Overview
2.2 Heating Technique
2.3 Temperature Control
2.4 Pressure, Reactor Configuration, and Susceptor Design
2.5 Precursor Chemistry and Delivery
3 Material Characteristics and Growth Procedures
3.1 Polytypes
3.2 Substrate Crystal Orientation
3.3 Pre-Growth Etching
3.4 Post-Growth Termination
3.5 Susceptor Effect
3.6 Doping
3.7 Dopant Activation
3.8 Porous Substrates
4 Hot-Wall and High-Temperature CVD
5 Safety
6 Summary
References
6 Homo-Epitaxy of Thick Crystalline 4H-SiC Structural Materials and Applications in an Electric Power System
1 Introduction
2 Brief History Review of Research and Development On the Epitaxy and Devices of High Voltage
2.1 4H-SiC Epitaxy
2.2 4H-SiC High-Voltage Devices
3 Challenges of Ultrathick SiC Epitaxial Materials
3.1 Defect Engineer
3.2 Carrier Lifetime
4 Conclusion
References
7 Epitaxial Growth and Structural Studies of Cubic SiC Thin Films Grown On Si-Face and C-Face 4H-SiC Substrates
1 Introduction
2 Epitaxial Growth
3 Twinning and Double Position Boundary Defects in 3C-SiC Grown On Si-Face 4H-SiC
3.1 Surface Properties
3.2 V-Shaped Twinning Structure
3.3 Dynamics of Adsorb Atoms Near the DPB Defects
3.4 Summary
4 Super-V-Shaped Structure On 3C-SiC Grown On the C-Face 4H-SiC
4.1 Defects in C-Face 3C-SiC
4.2 TEM Characterization
4.3 Growth Model
4.4 Step-Flow and Anti-Step-Flow in the Growth Model of SVSSs
4.5 Summary
5 Conclusion
Acknowledgements
References
8 SiC Thermal Oxidation Process and MOS Interface Characterizations: From Carrier Transportation to Single-Photon Source
1 Introduction
2 SiC Oxidation Mechanism and the Carrier Transportation at the MOS Interface
2.1 SiC Oxidation Process and Characteristics of MOS Interfaces
2.2 Theoretical Studies On the Carrier Transportation at the MOS Interface Performed By Ab Initio Calculations
3 Creation of Single-Photon Sources at the MOS Interface
3.1 Basic Properties and Structure Analyses of the SPSs
3.2 Electrical Control of the Single-Photon Sources Formed at the MOS Interface
4 Summary
References
Part III SiC Materials Studies and Characterization
9 Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals
1 Introduction
2 Experimental Details
2.1 Materials
2.2 Raman Spectrometer Systems
3 RT Raman Scattering and Line Shape of Doped 4H-SiC and 6H-SiC
3.1 RT Raman Spectra of 4H-SiC and 6H-SiC Crystalline Wafers
3.2 A1(LO) Phonon Line Shape Versus Nitrogen Doping Concentration
3.3 Theoretical Calculation of A1(LO) Phonon Line Shape
4 The Second-Order Raman Scattering of 4H-SiC and 6H-SiC
5 Electronic Raman Scattering From Nitrogen Defect Levels in 4H- and 6H-SiC
5.1 Theory of Plasmon–Phonon Coupling in N-Doped 6H-SiC
5.2 Raman Scattering of N-Doped 4H-SiC, Excited in Visible to NIR
5.3 Comparative Electronic Raman Scattering of N-Doped 4H-/6H-SiC
6 Temperature Dependence of Raman Scattering in Bulk 4H-SiC With Different Carrier Concentration
6.1 Experiment Temperature-Dependent RSS of Doped 4H-SiC
6.2 Theoretical Calculation of TO Phonon Frequency
6.3 Theoretical Simulation On Temperature Dependence of LOPC Mode
7 Rotation Raman Scattering Study On Anisotropic Property in Wurtzite 4H-SiC
7.1 Phonon Anisotropy Characteristics
7.2 Experimental Arrangements
7.3 Raman Selection Rules
7.4 Rotation Raman Spectra and Analyses
7.5 Raman Tensor Element Analyses
8 Conclusion and Summary
Acknowledgements
References
10 Near-Infrared Luminescent Centers in Silicon Carbide
1 Introduction
2 Intrinsic Defects
2.1 The Silicon Vacancy
2.2 The Divacancy
3 Transition Metal Impurities With Near-Infrared Emission
3.1 Vanadium
3.2 Chromium
3.3 Niobium
3.4 Molybdenum
3.5 Tungsten
3.6 Erbium
4 The Nitrogen-Vacancy Center in SiC
5 Unidentified Defects With Emission in the Near Infrared
References
11 SiC Substrate and Its Epitaxial Layers’ Analysis By Spectroscopic Ellipsometry
1 Introduction
2 Background of Spectroscopic Ellipsometry
2.1 Basic Theory of Spectroscopic Ellipsometry
2.2 Analysis Strategies of Spectroscopic Ellipsometry
2.2.1 Forward Modeling and Reverse Fitting
2.2.2 Matrix Decomposition
2.2.3 Matrix Transformation
2.2.4 Combined With Other Methods
2.3 Typical Applications of Spectroscopic Ellipsometry
2.4 Development of Spectroscopic Ellipsometry
3 Ellipsometric Analysis of Anisotropic SiC
3.1 Reflection and Transmission of Light By Bulk SiC
3.2 Determination of Optical Functions From Reflection Ellipsometry
3.3 Characterization of Anisotropy From Transmission Ellipsometry
3.4 Temperature-Dependent Optical Properties of Bulk SiC
4 Ellipsometric Analysis of SiC Epilayers and SiC Substrate-Based Epilayers
4.1 Ellipsometric Analysis of Substrate-Film-Ambient System
4.2 Ellipsometric Analysis of SiC Epilayer On the SiC Substrate and Other Substrates
4.3 Ellipsometric Analysis of Graphene On SiC Substrate
4.4 Ellipsometric Analysis of GaN On 4H-SiC Substrate
4.5 Ellipsometric Analysis of AlN On SiC Substrate
4.6 Temperature-Dependent Optical Properties Analysis of GaN Epilayer On SiC Substrate
5 The Subsurface Damaged Layer of SiC Substrate
5.1 Optical Constants of 4H-SiC
5.2 Optical Stack Model
5.3 The Sensitivity of Mueller Matrix
5.4 Reflection Mueller Matrix Analysis
6 Summary
Acknowledgements
References
12 Raman Microscopy and Imaging of Semiconductor Films Grown On SiC Hybrid Substrate Fabricated By the Method of Coordinated Substitution of Atoms On Silicon
1 Introduction
1.1 Raman Mapping of Various SiC Structures
1.1.1 Crystalline Bulk SiC Structures
1.1.2 SiC Layers Grown On Different Substrates
1.1.3 SiC Fibers
1.1.4 Gr and III-V Semiconductors Deposited Onto SiC
1.2 Method of Coordinated Substitution of Atoms and Its Distinctive Features
2 Experimental Details
2.1 Investigation of 3C-SiC Layers Deposited By Method of Coordinated Substitution of Atoms
2.1.1 Fabrication of SiC/Si Hybrid Substrate
2.1.2 Microscopy Characterization Techniques
2.1.3 Raman Microscopy and Mapping of SiC/Si Hybrid Substrate
2.1.4 Mechanism of the Raman Signal Enhancement
2.2 SiC-On-Si – A New, Flexible Template for the Growth of Epitaxial Films and Nanocrystals
2.2.1 Growth of II-VI Compounds On SiC/Si Substrates
2.2.2 Growth of III-V Compounds On SiC/Si Substrates
2.2.3 Hybrid SiC/Si Substrate as an Intermediate Structure for Two-Stage Conversion of Si Into a Thin Layer of Diamond-Like Graphite
3 Conclusions and Summary
Acknowledgments
References
Part IV SiC Devices and Developments
13 4H-SiC-Based Photodiodes for Ultraviolet Light Detection
1 Introduction
2 Basic Theory of UV Photodetection
2.1 Photoelectric Effect
2.1.1 External Photoelectric Effect
2.1.2 Internal Photoelectric Effect
2.2 Key Parameters of UV Photodiodes
2.2.1 Quantum Efficiency and Responsivity
2.2.2 Cut-Off Frequency and Cut-Off Wavelength
2.2.3 Photocurrent and Dark Current
2.2.4 Breakdown Voltage
3 Classical 4H-SiC-Based Photodetectors
3.1 Schottky Barrier Diodes
3.2 Metal-Semiconductor-Metal (MSM) Diodes
3.3 P-N and P-I-N Photodiodes
3.4 Avalanche Photodiodes
4 Novel 4H-SiC-Based UV Photodetectors
4.1 Graphene/4H-SiC UV Photodetectors
4.2 Ga2O3/4H-SiC UV Photodetectors
5 Conclusions and Outlook
References
14 SiC Radiation Detector Based On Metal-Insulator-Semiconductor Structures
1 Introduction
2 SiC Material Properties
3 SiC Radiation Detector With MIS Structures
3.1 Vertical Structure With Thin Al2O3 as an Insulator
3.2 Vertical Structure With Thin HfO2 as the Insulator
3.3 Vertical Structure With Thick SiO2 as the Insulator
3.4 MIS Structures With Graphene Insertion in Ohmic Contact Electrode
4 Conclusion
References
15 Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied By Short Wavelength and Synchrotron X-Ray Diffraction
1 Introduction
2 Research Background
3 Experimental and Fundamental Details
4 Theoretical Fourier Transform Calculation On 3C-SiC
5 Theoretical Calculation of Homo-Epitaxial 6H-SiC and 4H-SiC
6 Synchrotron Radiation X-Ray Diffraction Measurements and Simulation
7 Conclusion
References
Index