Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Author(s): Kazumi Wada, Stella W. Pang
Series: Optoelectronic Properties of Semiconductors and Superlattices, 11
Publisher: CRC Press
Year: 2022
Language: English
Pages: 425
City: Boca Raton
Cover
Half Title
Series
Title
Copyright
Contents
About the Series
Foreword
Preface
Defects in Device Fabrication
1 Saturation of Free Carrier Concentration in Semiconductors
2 Point Defect Formation Near Surfaces
3 Optical Characterization of Plasma Etching Induced Damage
4 Dry Etch Damage in Widegap Semiconductor Materials
5 Generation, Removal, and Passivation of Plasma Process Induced Defects
6 Defects Induced by Metal Semiconductor Contacts Formation
7 Electrical Characterization of Defects Introduced in Epitaxially Grown GaAs by Electron-, Proton- and He-Ion Irradiation
Defects in Device Operation
8 Instability and Defect Reaction
9 Defects and Device Degradation
Index
