High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.
Features:
- Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
- Covers novel indium arsenide architectures for achieving terahertz frequencies
- Discusses impact of device parameters on frequency response
- Illustrates noise characterization of optimized indium arsenide HEMTs
- Introduces terahertz electronics including sources for terahertz applications.
This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Author(s): N. Mohankumar
Publisher: CRC Press
Year: 2021
Language: English
Pages: 142
City: Boca Raton
Cover
Half Title
Title Page
Copyright Page
Table of Contents
Preface
Editor
Contributors
Chapter 1 Introduction to III–V Materials and HEMT Structure
1.1 Introduction
1.2 Semiconductors Based on III–V Materials
1.3 Heterojunction Structure
1.4 Discontinuity in Bands
1.5 Triangular Quantum Well and 2DEG
1.6 Contacts in Semiconductors
1.6.1 Ohmic Contact
1.6.2 Schottky Contact
1.7 High Electron Mobility Transistor (HEMT)
1.7.1 Epitaxial Layers in the HEMT
1.7.2 Cap Layer
1.7.3 Barrier Layer
1.7.4 δ-Doping Layer
1.7.5 Spacer Layer
1.7.6 Channel Layer
1.7.7 Buffer Layer
1.8 Summary
References
Chapter 2 III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications
2.1 Introduction
2.1.1 Indium Antimonide HEMTs for Low-Power Applications
2.1.2 Failure Mechanism in InSb-Based Heterostructures
2.1.3 Effects of Threading Dislocation Degradation
2.1.4 Remedies to Address Defect Issues in InSb HEMTs
2.2 III–V Heterostructure Devices for Ultrahigh-Power Applications
2.2.1 Wide Bandgap HEMTs for High-Power, High-Temperature Electronics
2.3 III–V GaN-Based Compound Semiconductors
2.3.1 Bandgap Engineering
2.3.2 Impact of Polarization in GaN Devices
2.3.3 Lattice Mismatch and Strain in III–V Nitride Semiconductors
2.3.4 AlGaN/GaN Heterostructure HEMTs
2.3.5 Challenges in GaN-Based Devices
2.3.6 AlGaN Channel HEMT Device for High-Power Applications
2.3.7 Effect of FP on AlGaN Channel HEMT Devices
2.4 Summary
References
Chapter 3 III–V Heterostructure Devices for High-Frequency Applications
3.1 Introduction
3.2 Device Description
3.3 Power Gain, Output Power, and Power-Added Efficiency
3.4 Review of InGaAs and InAs HEMTs for High-Frequency Applications
3.5 Review of InAs-Based Composite Channel HEMT Devices
3.6 Review of InGaAs/InAs Channel Double-Gate MOSFET/HEMT Devices
3.7 Summary
References
Chapter 4 Overview of THz Applications
4.1 Introduction
4.2 Applications of THz Frequency
4.2.1 Dermatology
4.2.2 Oncology
4.2.3 Oral Health Care
4.2.4 Medical Imaging
4.2.5 Security and Communication
4.3 Visualization Methods
4.4 THz Generation in InAs HEMTs
4.4.1 Semiconductor Targets
4.4.2 P-Type InAs HEMTs
4.5 Summary
References
Chapter 5 Device and Simulation Framework of InAs HEMTs
5.1 Introduction
5.2 Short-Channel Effects
5.2.1 Drain-Induced Barrier Lowering (DIBL)
5.2.2 Subthreshold Slope
5.3 Simulation Framework
5.3.1 Technology Computer-Aided Design (TCAD)
5.3.1.1 Input Files
5.3.1.2 Output Files
5.3.2 Device Simulation and Models
5.3.2.1 Transport Models
5.4 Summary
References
Chapter 6 Single-Gate (SG) InAs-based HEMT Architecture for THz Applications
6.1 Introduction to Single-Gate HEMT Devices
6.2 Channel Materials
6.3 Electron Transport Properties of the Material
6.4 InAlAs/InGaAs-Based HEMTs
6.4.1 Structure of the Device
6.4.2 Electrical Properties of InAlAs/InGaAs-Based HEMTs
6.5 Sub-50 nm Gate InP-Based HEMTs
6.5.1 Structure of the Device
6.5.2 I–V Characteristics of the 25 nm Gate HEMTs
6.6 Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As-Based HEMTs
6.6.1 Structure of the Device
6.6.2 I–V Characteristics of the Pseudomorphic Devices
6.7 In0.7Ga0.3As-Based Metamorphic HEMTs
6.7.1 Structure of the Device
6.7.2 DC Characteristics of In0.7Ga0.3As-Based MHEMTs
6.8 In0.7Ga0.3As/InAs/In0.7Ga0.3As-Based HEMTs
6.9 InGaAs/Strained-InAs/InGaAs-Based HEMTs
6.10 InAs Thin-Channel-Based HEMTs
6.11 Advantages of the Single-Gate HEMT
6.12 Applications of the Single-Gate HEMT
6.13 Summary
References
Chapter 7 Effect of Gate Scaling and Composite Channel in InAs HEMTs
7.1 Introduction
7.2 Gate Scaling
7.3 Effect of Gate Scaling
7.3.1 Transfer Characteristics
7.3.2 Output Characteristics
7.3.3 Short-Channel Effects
7.3.3.1 Drain-Induced Barrier Lowering (DIBL)
7.3.3.2 Subthreshold Slope (SS)
7.3.4 Frequency Performance
7.4 Effect of Composite Channel
7.4.1 DC Performance
7.4.2 Threshold Voltage (VT)
7.4.3 RF Performance
7.5 Summary
References
Chapter 8 Double-Gate (DG) InAs-based HEMT Architecture for THz Applications
8.1 Introduction
8.2 Device Structure
8.3 Device Performance
8.3.1 DC Performance
8.3.2 Threshold Voltage (VT)
8.3.3 Short-Channel Effects
8.3.3.1 Subthreshold Slope (SS)
8.3.3.2 Drain-Induced Barrier Lowering (DIBL)
8.3.4 RF Performance
8.4 Summary
References
Chapter 9 Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs
9.1 Introduction
9.2 Structure of Dual Channel and Drain-Side Recess Length of Gate
9.3 Formation of Dual Channel
9.4 Performance of Double-Gate HEMTs
9.4.1 Sheet Carrier Density
9.4.2 DC Performance of DCDG-HEMTs
9.4.2.1 Transfer Characteristics
9.4.2.2 Threshold Voltage and Transconductance
9.4.2.3 Output Characteristics
9.4.2.4 Short-Channel Effects
9.4.3 RF Performance of DCDG-HEMTs
9.5 Summary
References
Chapter 10 Noise Analysis in Dual Quantum Well InAs-based Double-Gate (DG) HEMTs
10.1 Introduction
10.2 Dual-Quantum-Well Structure
10.3 Green’s Function Method
10.4 Noise Analysis
10.5 Summary
References
Index
